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sa8877-xx very low noise, low dropout, 150 ma linear regulator product data 2002 jun 20 integrated circuits
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2 2002 jun 20 8532357 28506 general description the sa8877-xx family are very low-noise, low-dropout, low quiescent-current linear regulators designed for battery-powered applications, although they can also be used for devices powered by ac-dc converters. the parts are available in a range of preset output voltages from 2.5 v to 4.5 v. typical dropout voltages are only 165 mv at 150 ma, and 55 mv at 50 ma. reverse battery current is extremely low, 0.5 m a typ. for demanding applications, output noise voltage of typically 20 m v rms is achieved with a 0.01 m f capacitor on the noise bypass pin. the input voltage can vary from 2.5 v dc to 5.5 v dc , providing up to150 ma output current. an internal p-channel fet pass transistor maintains an 85 m a typical supply current, independent of the load current and dropout voltage. other features include a 0.01 m a logic-controlled shutdown, short circuit and thermal shutdown protection, and reverse battery protection. to accommodate high density layouts, it is packaged in the small footprint 5-pin so5 (sot23-5). the sa8877 is pin compatible with the industry standard '2982 and a direct replacement for the max8877. features ? pin compatible with industry standard '2982 ? low output noise: 20 m v rms ? low dropout voltages: 165 mv at 150 ma; 55 mv at 50 ma ? thermal overload and short circuit protection ? reverse battery protection ? 85 m a no-load supply current ? 100 m a typical operating supply current at i out = 150 ma ? preset output voltage of 2.5 v, 2.6 v, 2.8 v, 3.0 v, 3.3 v, 3.6 v, 4.2 v and 4.5 v; other voltages upon request in 100 mv increments ? output current limit applications ? cordless, pcs, and cellular telephones ? pcmcia cards and modems ? handheld and portable instruments ? palmtop computers and electronic planners simplified system diagram sl01710 v out shdn v in bp gnd 5 4 3 sa8877-xx on off 1 2 c out c bp 1 m f 0.01 m f preset output 2.5 v to 4.5 v 150 ma input 2.5 v to 5.5 v c in 1 m f figure 1. simplified system diagram.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 3 ordering information type number package temperature type number name description version range sa8877- xx d so5 (sot23-5) plastic small outline package; 5 leads; body width 1.6 mm sot680-1 40 to +85 c note: the device has eight (8) voltage options, indicated by the xx on the type number. xx voltage (typical) sa8877-25 2.5 v sa8877-26 2.6 v sa8877-28 2.8 v sa8877-30 3.0 v sa8877-33 3.3 v sa8877-36 3.6 v sa8877-42 4.2 v sa8877-45 4.5 v pin configuration sl01709 1 2 34 5v out bp shdn gnd v in sa8877-xx figure 2. pin configuration. pin description pin symbol description 1 v in regulator input. supply voltage ranges from 2.5 v to 5.5 v. bypass with a 1 m f capacitor to gnd. 2 gnd ground. the lead may also serve as heat spreader by soldering it to a large pcb pad or circuit board ground plane to maximize power dissipation. 3 shdn active-low shutdown input. a logic low reduces the supply current to 10 m a. connect to in for normal operation. 4 bp noise bypass pin. low noise of typically 30 m v rms with optional 0.01 m f bypass capacitor. larger bypass capacitor further reduces noise. 5 v out regulator output. sources up to 150 ma. minimum output capacitor is 1 m f. maximum ratings symbol parameter conditions min. max. unit v in input voltage 5.5 +5.5 v dc v shdn shdn to gnd voltage 5.5 +5.5 v dc v shdn v in shdn to in voltage 5.5 +0.3 v dc v out , v bp out and bp to gnd voltage 0.3 v in + 0.3 v dc t stg storage temperature range 65 +150 c t j junction temperature range 55 +140 c t amb ambient temperature range 40 +85 c p d power dissipation t amb = 25 c 637 mw power dissipation derating factor above 25 c = 5.1 mw/ c notes: 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyo nd those indicated may adversely affect device reliability. functional operation under absolute maximum-rated condition is not imp lied. functional operation should be restricted to the recommended operating condition.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 4 electrical characteristics v in = v out(nom) + 0.5 v; 40 c t amb +85 c unless otherwise noted. typical values are at t amb = +25 c. (see note 1.) symbol parameter conditions min. typ. max. unit v in input voltage 2.5 5.5 v output voltage accuracy i out = 0.1 ma; t amb = +25 c; v out 2.5 v 1.4 1.4 % i out = 0.1 ma to 120 ma; 40 c t amb +85 c; v out 2.5 v 3.0 2.0 % i out = 0.1 ma; t amb = +25 c; v out < 2.5 v 3.0 3.0 % i out = 0.1 ma to 120 ma; 40 c t amb +85 c; v out < 2.5 v 3.5 3.5 % i out(max) maximum output current 150 ma i lim current limit 160 390 ma i q ground pin current no load 85 180 m a i out = 150 ma 100 m a i rbc reverse batter current 0.5 m a d v lnr line regulation 2.5 v or (v out + 0.1 v) v in 5.5 v; i out = 1 ma 0.125 0 0.125 %/v d v ldr load regulation 0.1 ma i out ; c out = 1.0 m f 0.01 0.02 %/ma dropout voltage (note 2) i out = 1 ma 1.0 mv i out = 50 ma 55 90 mv i out = 150 ma 165 mv v n(o) output voltage noise f = 10 hz to 100 khz; c 001 f c out = 10 m f 28 m v rms () c bp = 0.01 m f c out = 100 m f 20 m v rms f = 10 hz to 100 khz; c 01 f c out = 10 m f 13 m v rms c bp = 0.1 m f c out = 100 m f 12 m v rms shutdown v ih high-level shdn input threshold 2.5 v in 5.5 v 0.7v in v v il lowlevel shdn input threshold 2.5 v in 5.5 v 0.3v in v i shdn shdn input bias current v shdn = v in t amb = +25 c 0.01 100 na t amb = +85 c 0.5 na i q(shdn) shutdown supply current v out = 0 v t amb = +25 c 0.01 1 m a () t amb = +85 c 0.2 m a shutdown exit delay (t3) c bp = 0.01 m f; c 10 fld t amb = +25 c 30 150 m s (note 3) c out = 1.0 m f; no load 40 c t amb +85 c 300 m s thermal protection t shdn thermal shutdown junction temperature 140 c dt shdn thermal shutdown hysteresis 15 c notes: 1. limits are 100% production tested at t amb = +25 c. limits over the operating temperature range are guaranteed through correlation using statistical quality control (sqc) methods. 2. the dropout voltage is defined as v in v out , when v out is 100 mv below the value of v out for v in = v out + 0.5 v. (only applicable for v out = +2.5 v to +4.5 v.) 3. time needed for v out to reach 95% of final value.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 5 typical performance curves sa8877-33 with conditions: v in = v out(nom) + 0.5 v; t amb = 40 c to +85 c unless otherwise noted. typical values are at t amb = +25 c. output current (ma) sl01711 output voltage (v) 3.20 3.22 3.24 3.26 3.28 3.30 3.32 0 20 40 60 80 100 120 140 160 figure 3. output voltage versus output current. ground pin current ( a) m sl01712 output current (ma) 115 120 125 130 135 140 0 20 40 60 80 100 120 140 160 figure 4. gnd pin current versus output current. sl01713 input voltage (v) ground pin current ( a) m 0 20 40 60 80 100 120 140 160 0123456 figure 5. gnd pin current (no load) versus input voltage. output voltage (v) sl01714 input voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0123456 figure 6. output voltage (i out = 50 ma) versus input voltage. sl01715 temperature ( c) 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 40 20 0 20 40 60 80 100 output voltage (v) figure 7. output voltage (50 ma load) versus temperature. sl01716 temperature ( c) ground pin current ( a) m 110 115 120 125 130 135 140 40 20 0 20 40 60 80 100 figure 8. gnd pin current (50 ma load) versus temperature.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 6 typical performance curves (continued) sl01717 output current (ma) dropout voltage (mv) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 figure 9. dropout voltage versus output current. sl01718 input voltage (v) output voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 figure 10. output voltage (no load) versus input voltage. sl01719 input voltage (v) ground pin current ( a) m 20 0 20 40 60 80 100 120 140 160 0123456 figure 11. gnd pin current (50 ma) versus input voltage. sl01720 output current (ma) +85 c +25 c 40 c 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 dropout voltage (mv) figure 12. dropout voltage versus output current.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 7 typical performance curves (continued) ( v / sl01733 frequency (hz) output noise spectral density 0.000 0.001 0.010 0.100 1.000 10.000 0.1 1 10 100 1000 c load = 1 m f c load = 10 m f m hz ) figure 13. output noise spectral density versus frequency. esr ( ) w c out sl01734 load current (ma) 0.0 0.1 1.0 10.0 100.0 0 50 100 150 c out = 10 m f c out = 1 m f stable region figure 14. region of stable c out esr versus load current. sl01732 frequency (hz) power supply rejection ratio (db) 0 10 20 30 40 50 60 70 80 c l 10 m f c l 1 m f 0.1 1 10 100 1000 figure 15. power supply rejection ratio versus frequency. sl01731 bf capacitance (nf) output noise ( v ) 0 5 10 15 20 25 30 35 40 45 1 10 100 rms m figure 16. output noise versus bp capacitance sl01730 output current (ma) output noise ( v ) m 25.2 25.3 25.3 25.4 25.4 25.5 1 10 100 1000 rms figure 17. output noise versus output current.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 8 typical performance curves (continued) c in = 1.0 m f i l = 050 ma v in = v out + 0.5 v c out = 1.0 m f sl01721 figure 18. load transient response (with power supply source). c in = 1.0 m f i l = 050 ma v in = v out + 0.5 v c out = 1.0 m f sl01722 figure 19. load transient response (with aa battery source). i l = 050 ma v in = near dropout condition c in = 1.0 m f c out = 1.0 m f sl01723 figure 20. load transient response. sl01724 i l = 50 ma 0.01 m f bypass capacitor figure 21. shutdown exit delay. i l = 0 ma 0.01 m f bypass capacitor sl01725 figure 22. entering shutdown (no load).
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 9 technical discussion the sa8877-xx family are very low-noise, low-dropout, low quiescent-current linear regulators designed for battery-powered applications, although they can also be used for devices powered by ac-dc converters. the voltage regulation components of the sa8877-xx consist of a 1.23 v reference, an error amplifier, a p-channel pass transistor, and an internal feed-back voltage divider. the device also contains a reverse battery protection circuit, a thermal sensor, a current limiter, and shutdown logic. voltage regulation the 1.23 v bandgap reference is connected to the error amplifier's inverting input. the error amplifier compares this reference with the feedback voltage and amplifies the difference. if the feedback voltage is lower than the reference voltage, the pass-transistor gate is pulled lower, which allows more current to pass to the output and increases the output voltage. if the feedback voltage is too high, the pass-transistor gate is pulled up, allowing less current to pass to the output. the output voltage is fed back through an internal resistor voltage divider connected to the v out pin. the sa8877 uses a 1.1 w typical p-channel mosfet pass transistor. the p-channel mosfet requires no base drive, therefore the device has lower quiescent current than a comparable pnp transistor-based design. the sa8877-xx uses 100 m a of quiescent current under any load conditions. an optional external bypass capacitor connected between the bp pin and ground reduces noise at the output. power dissipation the sa8877's maximum power dissipation depends on the thermal resistance of the case and circuit board, the temperature difference between the die junction and ambient air, and the rate of air flow. the power dissipation across the device is p = i out (v in v out ). the maximum power dissipation is: p max = (t j t amb ) / ( q jb + q ba ) where t j t amb is the temperature difference between the sa8877 die junction and the surrounding air, q jb (or q jc ) is the thermal resistance of the package, and q ba is the thermal resistance through the printed circuit board, copper traces, and other materials to the surrounding air. the gnd pin provides an electrical connection to ground and a path for heat transfer away from the junction. connect the gnd pin to ground using a large pad or ground plane to maximize heat transfer. noise reduction an optional external 0.01 m f bypass capacitor at bp, in conjunction with an internal 200 w resistor, creates an 80 hz low-pass filter for noise reduction. the sa8877 produces 30 m v rms of output voltage noise with c bp = 0.01 m f and c out = 10 m f. this is negligible in most applications. start-up time is minimized by a power-on circuit that pre-charges the bypass capacitor. the `typical performance curves' section shows graphs of `output noise versus bp capacitance' (figure 16), `output noise versus output current' (figure 17), and `output noise spectral density versus frequency' (figure 13). device protection the sa8877 has several built-in protection circuits. current limiter : the current limiter controls the the pass transistor's gate voltage so the output current cannot exceed 390 ma. we recommend using 160 ma minimum to 500 ma maximum in the design parameters. because of the current limiter, the output can be shorted to ground for an indefinite amount of time with no damage to the part. reverse battery protection : the reverse battery protection circuit prevents damage to the device if the supply battery is accidentally installed backwards. this circuit compares v in and v shdn to ground and disconnects the device's internal circuits if it detects reversed polarity. reverse supply current is limited to 1 ma when this protective circuit is active, preventing the battery from rapidly discharging through the device. thermal overload protection : when the junction temperature exceeds +140 c, the thermal sensor signals the shutdown logic to turn off the pass transistor. after the junction temperature has cooled by 15 c the sensor signals the shutdown logic to turn the pass transistor on again. this will create a pulsed output during lengthy thermal overloads. note: thermal overload protection is to protect the device during fault conditions. do not exceed the maximum junction-temperature rating of t j = +150 c during continuous operation.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 10 application information capacitor selection and regulator stability normally, use a 1 m f capacitor on the sa8877 input and a 1 m f to 10 m f capacitor on the output. to improve the supply-noise rejection and line-transient response, use input capacitor values and lower esrs. to reduce noise and improve load-transient response, stability, and power-supply rejection, use use large output capacitors. for stable operation over the full temperature range and with load currents up to 150 ma, a 1 m f (min.) ceramic capacitor is recommended. note that some ceramic dielectrics exhibit large capacitance and esr variation with temperature. with dielectrics such as z5u and y5v, it may be necessary to increase the capacitance by a factor of 2 or more to ensure stability at temperatures below 10 c. with x7r or x5r dielectrics, 1 m f should be sufficient at all operating temperatures for v out = 2.5 v. a graph of the region of stable c out esr versus load current is shown in figure 14. use a 0.01 m f bypass capacitor at bp for low output voltage noise. increasing the capacitance will slightly decrease the output noise, but increase the start-up time. values above 0.1 m f provide no performance advantage and are not recommended (see figures 21 and 22 in the `typical performance curves'). load-transient considerations the sa8877 load-transient response graphs (figures 18, 19, and 20) show two components of the output response: a dc shift from the output impedance due to the load current change, and the transient response. typical transient for a step change in the load current from 0 ma to 50 ma is 40 mv. increasing the output capacitor's value and decreasing the esr attenuates the overshoot. psrr and operation from sources other than batteries the sa8877 is designed to deliver low dropout voltages and low quiescent currents in battery-powered systems. when operating from sources other than batteries, improved supply-noise rejection and transient response can be achieved by increasing the values of the input and output bypass capacitors, and through passive filtering techniques. power-supply rejection is 63 db at low frequencies and rolls off above 10 khz. see figure 15, `power supply rejection ratio versus frequency'. figures 18, 19, and 20 show the sa8877's line- and load-transient responses. input-output (dropout) voltage for output voltage greater than the minimum input voltage (2.5 v), the regulator's minimum input-output voltage differential (or dropout voltage) determines the lowest usable supply voltage. in battery-powered systems, this will determine the useful end-of-life battery voltage. because the sa8877 uses a p-channel mosfet pass transistor, the dropout voltage is a function of drain-to-source on-resistance (r ds(on) ) multiplied by the load current (see `typical performance curves'). packing method the sa8877-xx is packed in reels, as shown in figure 23. sl01305 tape detail cover tape carrier tape reel assembly tape guard band barcode label box figure 23. tape and reel packing method.
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 11 so5: plastic small outline package; 5 leads; body width 1.6 mm sot680-1
philips semiconductors product data sa8877-xx very low noise, low dropout, 150 ma linear regulator 2002 jun 20 12 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . ? koninklijke philips electronics n.v. 2002 all rights reserved. printed in u.s.a. date of release: 09-02 document order number: 9397 750 10183

data sheet status [1] objective data preliminary data product data product status [2] development qualification production definitions this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice. this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com.

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